Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi <sub>12</sub> FeO <sub>20</sub> Ideal Sillenite
نویسندگان
چکیده
Resistive Random-Access Memory Devices Neuromorphic devices are essential for beyond von-Neumann computing and Random Access Memories (RRAMs) the backbone it. In article number 2200744, Chandra Prakash colleagues show RRAM characteristics in a Bi12FeO20 system first time, together with negative differential resistance (NDR) write once read many (WORM) like simultaneously. It is hoped this could lead to potential of neuromorphic low-power memory devices.
منابع مشابه
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2023
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202370011